Disclosed herein are microelectronic structures including glass cores, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a glass core having through-glass vias (TGVs) therein; a metallization region at a first face of the glass core, wherein a conductive pathway in the first metallization region is conductively coupled to at least one of the TGVs; a bridge component in the metallization region; a first conductive contact at a face of the metallization region, wherein the first conductive contact is conductively coupled to the conductive pathway; and a second conductive contact at the face of the metallization region, wherein the second conductive contact is conductively coupled to the bridge component.