Invention Application
- Patent Title: METHODS OF FABRICATING CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
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Application No.: US17376458Application Date: 2021-07-15
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Publication No.: US20220216296A1Publication Date: 2022-07-07
- Inventor: Gabjin NAM , Youngbin LEE , Cheoljin CHO , Jaehyoung CHOI
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0001055 20210105
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/11507

Abstract:
Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.
Public/Granted literature
- US11990503B2 Methods of fabricating capacitor and semiconductor device including the capacitor Public/Granted day:2024-05-21
Information query
IPC分类: