Invention Application
- Patent Title: DEPOSITION APPARATUS AND DEPOSITION METHOD
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Application No.: US17644412Application Date: 2021-12-15
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Publication No.: US20220223463A1Publication Date: 2022-07-14
- Inventor: Hitoshi KATO , Toshiyuki NAKATSUBO
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2021-003756 20210113
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01J37/32 ; C23C16/458 ; C23C16/44

Abstract:
A deposition apparatus includes a processing chamber, and a susceptor provided in the processing chamber. The susceptor has a recess on a surface of the susceptor. The recess includes a support and a groove, the support supports a region that includes a center of a substrate and that does not include an edge of the substrate, the groove is located around the support, and the groove is recessed relative to the support. The deposition apparatus further includes a process gas supply configured to supply a process gas to the surface of the susceptor and a purge gas supply configured to supply a purge gas to the groove.
Information query
IPC分类: