公开(公告)号：US20240401199A1

公开(公告)日：2024-12-05

申请号：US18668699

申请日：2024-05-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yu WAMURA ,  Kazuhide HASEBE ,  Yuichiro MOROZUMI

IPC: C23C16/455 ,  C23C16/12 ,  C23C16/44 ,  C23C16/458

Abstract: A substrate processing apparatus includes a processing chamber, a turntable rotatably provided inside the processing chamber, a plurality of placing tables rotatable with respect to the turntable and placed with a plurality of substrates, respectively, at positions separated from a rotation center of the turntable, and a plurality of nozzles disposed at positions passing centers of the plurality of placing tables as the turntable rotates. The plurality of nozzles include a processing gas discharger configured to discharge a processing gas with respect to the plurality of substrates on the plurality of placing tables that move with the rotation of the turntable, in a radial range shorter than a radius of the plurality of substrates, and a gas suction section configured to suck a gas at an outer side of the processing gas discharger.

公开(公告)号：US20240401198A1

公开(公告)日：2024-12-05

申请号：US18665885

申请日：2024-05-16

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: A substrate-processing method for processing a substrate includes (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate; (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate that is rotating in (A); and (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes through a center of the substrate. In (B), a flow rate of the gas discharged from the discharge hole is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole of the nozzle gas discharge mechanism that is moving relative to the substrate in (C).

公开(公告)号：US20210249265A1

公开(公告)日：2021-08-12

申请号：US17155551

申请日：2021-01-22

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: H01L21/02 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

Abstract: A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si—H bond. In the first processing region, Si2H6 gas having a temperature less than the first temperature is supplied to form an SiH3 molecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si—H bond in the SiH3 molecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.

公开(公告)号：US20180334745A1

公开(公告)日：2018-11-22

申请号：US15976354

申请日：2018-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO

IPC: C23C16/458 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/687

CPC classification number: C23C16/4584 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/52 ,  H01L21/68764

Abstract: A substrate processing apparatus includes: a mounting stand for mounting a substrate thereon; a support rod for supporting the mounting stand from below; a revolution mechanism provided below the mounting stand and for supporting the support rod to revolve the mounting stand; a heating part provided between the mounting stand and the revolution mechanism as seen in a height direction and for heating a revolution region of the mounting stand; a heat transfer plate provided between the heating part and the revolution region and for radiating a heat generated from the heating part to the revolution region; and a processing gas supply part for supplying a processing gas to the revolution region. Each of the heating part and the heat transfer plate is divided into a center side and an outer side of the processing container via a gap so as to form a movement path of the support rod.

公开(公告)号：US20180195173A1

公开(公告)日：2018-07-12

申请号：US15862190

申请日：2018-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Yukio OHIZUMI ,  Manabu HONMA ,  Takeshi KOBAYASHI

IPC: C23C16/455 ,  C23C14/50 ,  C23C14/04 ,  H01L21/304 ,  H01L21/67 ,  H01L21/687 ,  C23C14/26 ,  C23C14/22 ,  B05C11/10

CPC classification number: C23C16/45551 ,  B05C11/1031 ,  C23C14/042 ,  C23C14/228 ,  C23C14/26 ,  C23C14/505 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/304 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

公开(公告)号：US20180019114A1

公开(公告)日：2018-01-18

申请号：US15637208

申请日：2017-06-29

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yutaka TAKAHASHI ,  Masahiro MURATA

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/34

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28202

Abstract: A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.

公开(公告)号：US20170268104A1

公开(公告)日：2017-09-21

申请号：US15617102

申请日：2017-06-08

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Jun SATO ,  Masahiro MURATA ,  Kentaro OSHIMO ,  Tomoko SUGANO ,  Shigehiro MIURA

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/507

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US20160138159A1

公开(公告)日：2016-05-19

申请号：US14936759

申请日：2015-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Shigehiro MIURA ,  Hiroyuki KIKUCHI ,  Katsuyoshi AIKAWA

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/677

CPC classification number: C23C16/4584 ,  C23C16/4408 ,  C23C16/45551 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

Abstract translation: 通过在基板上提供处理气体来形成膜的成膜装置包括具有装载区域的旋转台，其被构造成使装载在装载区域上的基板旋转; 处理气体供给机构，被配置为将处理气体供给到气体供给区域，以在基板上通过基板的旋转多次重复地穿过气体供给区域进行成膜; 第一齿轮，设置在所述旋转台的另一个表面侧，并且沿所述旋转台的旋转方向旋转; 配置有与所述第一齿轮接合的行星齿轮的第二齿轮，所述行星齿轮被设置成与所述加载区域一起旋转，并且被配置为使所述加载区域旋转以允许所述基板旋转。

公开(公告)号：US20150118415A1

公开(公告)日：2015-04-30

申请号：US14514537

申请日：2014-10-15

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Shigehiro MIURA

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/448 ,  C23C16/458

CPC classification number: C23C16/50 ,  C23C16/45563 ,  C23C16/4584 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01L21/68764 ,  H01L21/68771 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing apparatus for processing a substrate includes a turntable for orbitally revolving a substrate mounting area; a nozzle portion facing the substrate mounting area and having gas discharge ports for generating plasma; an antenna including a linear portion extending to cover a substrate passage area on a downstream side relative to the nozzle portion and a separated portion, wound around a vertical axis, and generating induction plasma in a process area to which the gas is supplied; a Faraday shield including a conductive plate provided between the antenna and the process area to cut off an electric field, and slits formed to orthogonally cross the antenna and cause a magnetic field to pass therethrough, wherein the slits are formed on aside lower than the linear portion and a portion of the conductive plate without the slits is positioned on a side lower than a curved portion.

Abstract translation: 一种用于处理衬底的等离子体处理装置，包括用于使衬底安装区域进行轨道旋转的转盘; 面向基板安装区域并具有用于产生等离子体的气体排出口的喷嘴部分; 天线，包括延伸以覆盖相对于喷嘴部分的下游侧的基板通道区域的直线部分和绕垂直轴线缠绕的分离部分，并且在供应气体的处理区域中产生感应等离子体; 包括设置在天线和处理区域之间以切断电场的导电板的法拉第屏蔽，以及形成为正交地穿过天线并导致磁场通过的狭缝，其中狭缝形成在低于线性 导电板的没有狭缝的部分和一部分位于比弯曲部分低的一侧。

公开(公告)号：US20140011369A1

公开(公告)日：2014-01-09

申请号：US13934548

申请日：2013-07-03

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Shigehiro Miura

IPC: H01L21/02

CPC classification number: H01L21/02233 ,  C23C16/402 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565

Abstract: A film deposition apparatus forming a thin film by after repeating cycles of sequentially supplying gases to a substrate on a turntable inside a vacuum chamber that includes a first supplying portion for causing the substrate to absorb a first gas containing silicon; a second supplying portion apart from the first supplying portion for supplying a second gas containing active species to produce a silicone dioxide; a separating area between the first and second supplying portions for preventing their mixture; a main heating mechanism for heating the substrate; and an auxiliary mechanism including a heat lamp above the turntable and having a wavelength range absorbable by the substrate to directly heat to be a processing temperature at which an ozone gas is thermally decomposed, wherein a maximum temperature is lower than the thermally decomposed temperature, at which, the first gas is absorbed and oxidized by the second gas.

Abstract translation: 一种成膜装置，其通过在包括用于使基板吸收包含硅的第一气体的第一供应部分的真空室内的基板上顺序地向基板供应气体的重复循环之后形成薄膜; 第二供应部分，与第一供应部分分开，用于供应含有活性物质的第二气体以产生二氧化硅; 在第一和第二供应部分之间的分离区域，用于防止它们的混合; 用于加热基板的主加热机构; 以及辅助机构，其包括位于所述转盘上方的加热灯，并且具有可被所述基板吸收的波长范围，以直接加热为臭氧气体被热分解的处理温度，其中最高温度低于所述热分解温度， 第一气体被第二气体吸收和氧化。