- 专利标题： CONDUCTIVE THICK FILM PASTE FOR SILICON NITRIDE AND OTHER SUBSTRATES
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申请号： US17272736申请日： 2019-09-06
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公开(公告)号： US20220225501A1公开(公告)日： 2022-07-14
- 发明人: Umesh Kumar , John J. Maloney , Bradford Smith , Ponnusamy Palanisamy , Srinivasan Sridharan , George E. Sakoske, Jr. , George E. Graddy, Jr.
- 申请人： Ferro Corporation
- 申请人地址： US OH Mayfield Heights
- 专利权人： Ferro Corporation
- 当前专利权人： Ferro Corporation
- 当前专利权人地址： US OH Mayfield Heights
- 国际申请： PCT/US2019/049838 WO 20190906
- 主分类号： H05K1/09
- IPC分类号： H05K1/09 ; B33Y80/00 ; B22F1/00 ; B22F7/04 ; B33Y10/00 ; B22F10/10 ; B41M1/12 ; B41M1/34 ; B41M5/00 ; C09D5/24 ; C09D17/00
摘要：
Conductive thick film compositions compatible to aluminum nitride, alumina and silicon nitride substrates for microelectronic circuit application. The conductive thick film composition includes first copper powder, second copper powder, and glass component. The conductive thick film composition further includes CU2O, Ag, and at least one metal element selected from Ti, V, Zr, Mn, Cr, Co, and Sn. After firing, the conductive thick film composition exhibit improved sheet resistivity, and improved adhesion with underlying substrate.
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