Invention Application
- Patent Title: PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
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Application No.: US17576012Application Date: 2022-01-14
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Publication No.: US20220230848A1Publication Date: 2022-07-21
- Inventor: Taro IKEDA , Eiki KAMATA , Yoshiyuki KONDO
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2021-006262 20210119
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.
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