公开(公告)号：US20250104972A1

公开(公告)日：2025-03-27

申请号：US18885134

申请日：2024-09-13

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Kenta KATO ,  Taro IKEDA

IPC: H01J37/32

Abstract: Provided is a plasma source comprising: a housing that defines a plasma generation space; a gas inlet port disposed in the housing to introduce a gas; a supply port disposed in the housing to supply active species of plasma produced from the gas in the plasma generation space; an ignition power supply port disposed in the housing to supply a radio-frequency (RF) power for igniting the plasma in the plasma generation space; and a maintenance power supply port disposed in the housing to supply the RF power for maintaining the plasma ignited in the plasma generation space.

公开(公告)号：US20240055231A1

公开(公告)日：2024-02-15

申请号：US18271635

申请日：2022-01-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32165 ,  H01J37/32339

Abstract: A plasma treatment method according to the present disclosure includes a step (a) for continuously introducing electromagnetic waves into a chamber of a plasma treatment device. The electromagnetic waves are VHF waves or UHF waves. The electromagnetic waves are introduced into the chamber so as to form standing waves in the chamber along the lower surface of an upper electrode of the plasma treatment device. The plasma treatment method further includes a step (b) for periodically applying a negative voltage to the upper electrode while the step for continuously introducing the electromagnetic waves is being carried out. The plasma treatment method further includes a step (c) for supplying a treatment gas into the chamber only during the period of applying the negative voltage to the upper electrode.

公开(公告)号：US20230335876A1

公开(公告)日：2023-10-19

申请号：US18026103

申请日：2021-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Eiki KAMATA

IPC: H01P3/06 ,  H01J37/32

CPC classification number: H01P3/06 ,  H01J37/3222

Abstract: There is provided a tuner that forms a part of an electromagnetic wave transmission path for supplying electromagnetic waves from a power supply to a load, and that matches an impedance on a power supply side and an impedance on a load side, comprising: a coaxial line including a cylindrical inner conductor and a cylindrical outer conductor disposed coaxially outside the inner conductor; an annular first dielectric constant changing material disposed in a space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; an annular second dielectric constant changing material spaced apart from the first dielectric constant changing material in a line length direction of the coaxial line, disposed in the space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; a first power supply portion configured to supply power to the first dielectric constant changing material; and a second power supply portion configured to supply power to the second dielectric constant changing material.

公开(公告)号：US20230260750A1

公开(公告)日：2023-08-17

申请号：US18164032

申请日：2023-02-03

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32715 ,  H01J37/3244 ,  H01J37/32834

Abstract: A plasma processing apparatus includes: a processing container; a stage in the processing container; an upper electrode provided to face a placement surface of the stage; and an exhaust duct provide to define a processing space inside the processing container together with the placement surface and the upper electrode, wherein a radial cross-section of an outer wall of the exhaust duct facing the processing space is an L-shape, the exhaust duct includes an exhaust hole communicating with an internal exhaust path, and the exhaust hole is configured such that, with respect to first and second lengths of two sides of the L-shape, a distance from a corner portion of the L-shape to the exhaust hole is equal to or less than each of the first and second lengths, the first length is 7 mm or more, and the second length is equal to or greater than the first length.

公开(公告)号：US20230238219A1

公开(公告)日：2023-07-27

申请号：US18008008

申请日：2021-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Taro IKEDA ,  Satoru KAWAKAMI ,  Takumi KABE

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/334

Abstract: This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.

公开(公告)号：US20230081103A1

公开(公告)日：2023-03-16

申请号：US17902642

申请日：2022-09-02

Applicant: Tokyo Electron Limited

Inventor： Kenta KATO ,  Taro IKEDA

IPC: H01J37/32

Abstract: A plasma source comprising: a plasma generator including a first wall having an opening and a second wall facing the first wall, and forming a plasma generating space; a dielectric window disposed on the first wall to block the opening and configured to transmit electromagnetic waves to the plasma generating space; and a protruding portion disposed on the second wall, protruding from the second wall to be close to the dielectric window, and containing a conductor at least partially. The protruding portion has a gas hole that opens toward the dielectric window.

公开(公告)号：US20220230848A1

公开(公告)日：2022-07-21

申请号：US17576012

申请日：2022-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Eiki KAMATA ,  Yoshiyuki KONDO

IPC: H01J37/32

Abstract: Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

公开(公告)号：US20170309452A1

公开(公告)日：2017-10-26

申请号：US15488232

申请日：2017-04-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka FUJINO ,  Tomohito KOMATSU ,  Taro IKEDA ,  Jun NAKAGOMI ,  Takeo WAKUTSU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.

公开(公告)号：US20170263417A1

公开(公告)日：2017-09-14

申请号：US15456894

申请日：2017-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA

IPC: H01J37/32

Abstract: There is provided a plasma processing apparatus including a microwave output part configured to generate microwaves and to distribute and output the microwaves to a plurality of paths, a microwave transmission part configured to transmit the microwaves outputted from the microwave output part into a process container via a plurality of transmission paths, and a control part configured to control the microwaves. The control part is configured to control the microwaves such that the phases of microwaves become different from each other when the microwaves transmitted via the transmission paths are introduced from a microwave transmitting plate for common use into the process container.

公开(公告)号：US20150348758A1

公开(公告)日：2015-12-03

申请号：US14716175

申请日：2015-05-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki MIYASHITA ,  Taro IKEDA ,  Yuki OSADA ,  Tomohito KOMATSU

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32229 ,  H01J37/32311 ,  H01J37/3244 ,  H01P5/04

Abstract: An impedance matching slug that performs an impedance matching process in a waveguide is axially movably interposed between an outer conductor and an inner conductor of the waveguide. The impedance matching slug includes: a cylindrical first part and a cylindrical second part which are coupled to each other, wherein each of the first part and the second part has an inner circumferential surface facing the inner conductor and an outer circumferential surface facing the outer conductor, wherein the second part is disposed in the outside of the first part in such a manner that the inner circumferential surface of the second part is in contact with the outer circumferential surface of the first part, wherein one of the first part and the second part is constituted by a conductor, and wherein the other of the first part and the second part is constituted by a dielectric.

Abstract translation: 在波导中的外导体和内导体之间轴向可动地插入执行波​​导中的阻抗匹配处理的阻抗匹配块。 阻抗匹配块包括：彼此耦合的圆柱形第一部分和圆柱形第二部分，其中第一部分和第二部分中的每一个具有面向内部导体的内周面和面向外部导体的外周面 其中，所述第二部分以所述第二部分的内周面与所述第一部分的外周面接触的方式设置在所述第一部分的外侧，其中，所述第一部分和所述第二部分中的一个 由导体构成，并且其中第一部分和第二部分中的另一个由电介质构成。