- 专利标题： FinFET Device and Method of Forming Same
-
申请号： US17657770申请日： 2022-04-04
-
公开(公告)号： US20220231169A1公开(公告)日： 2022-07-21
- 发明人: Hsin-Hao Yeh , Fu-Ting Yen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/762 ; H01L29/66 ; H01L21/324
摘要：
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
公开/授权文献
- US11855213B2 FinFET device and method of forming same 公开/授权日：2023-12-26
信息查询
IPC分类:
