公开(公告)号：US20220231169A1

公开(公告)日：2022-07-21

申请号：US17657770

申请日：2022-04-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hao Yeh ,  Fu-Ting Yen

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L21/324

摘要： A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.

公开(公告)号：US11011394B2

公开(公告)日：2021-05-18

申请号：US15906166

申请日：2018-02-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hao Yeh

IPC分类号： H01L21/67 ,  H01L21/324 ,  H01L21/268 ,  H01L21/68 ,  H01L21/225 ,  H01L21/66 ,  H01L23/544

摘要： A method for annealing a semiconductor die is provided. Information regarding layout of the semiconductor die is received. At least one annealing orbit on the semiconductor die is obtained according to the received information. An alignment procedure is performed on a plurality of alignment marks of the semiconductor die according to the received information. The semiconductor die is positioned according to the alignment marks. A laser beam with a first laser parameter is projected onto the positioned semiconductor die along the annealing orbit, so as to anneal a first portion of the positioned semiconductor die covered by the annealing orbit. The positioned semiconductor die is partially covered by the annealing orbit.

公开(公告)号：US20230386826A1

公开(公告)日：2023-11-30

申请号：US18358508

申请日：2023-07-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L21/0217 ,  H01L21/76224 ,  H01L21/0337 ,  H01L21/02208 ,  H01L21/3086 ,  H01L21/0228 ,  H01L29/66795 ,  H01L21/3081 ,  H01L29/66545 ,  H01L21/823431 ,  H01L29/785

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

公开(公告)号：US11830727B2

公开(公告)日：2023-11-28

申请号：US17809917

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/033 ,  H01L21/308

CPC分类号： H01L21/0217 ,  H01L21/0228 ,  H01L21/02208 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

公开(公告)号：US20240097036A1

公开(公告)日：2024-03-21

申请号：US18526317

申请日：2023-12-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hao Yeh ,  Fu-Ting Yen

IPC分类号： H01L29/78 ,  H01L21/324 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L29/7849 ,  H01L21/324 ,  H01L21/76224 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.

公开(公告)号：US11855213B2

公开(公告)日：2023-12-26

申请号：US17657770

申请日：2022-04-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hao Yeh ,  Fu-Ting Yen

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L21/324

CPC分类号： H01L29/7849 ,  H01L21/324 ,  H01L21/76224 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.

公开(公告)号：US20220336202A1

公开(公告)日：2022-10-20

申请号：US17809917

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Co.,Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/033 ,  H01L21/308

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.