Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US17614690Application Date: 2020-05-22
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Publication No.: US20220231644A1Publication Date: 2022-07-21
- Inventor: Minato ITO , Hitoshi KUNITAKE , Takayuki IKEDA
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP2019-106670 20190607
- International Application: PCT/IB2020/054867 WO 20200522
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H01L27/108 ; H01L27/12 ; H01L29/786

Abstract:
A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.
Public/Granted literature
- US12101067B2 Semiconductor device Public/Granted day:2024-09-24
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