Invention Application
- Patent Title: METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
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Application No.: US17161313Application Date: 2021-01-28
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Publication No.: US20220238431A1Publication Date: 2022-07-28
- Inventor: Naveen Kaushik , Sidhartha Gupta , Pankaj Sharma , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/11582 ; G11C5/06 ; H01L27/11556 ; H01L21/768 ; H01L21/48

Abstract:
A method of forming a microelectronic device comprises forming a stack structure comprising vertically alternating insulating structures and conductive structures arranged in tiers. Each of the tiers individually comprises one of the insulating structures and one of the conductive structures. A sacrificial material is formed over the stack structure and pillar structures are formed to extend vertically through the stack structure and the sacrificial material. The method comprises forming conductive plug structures within upper portions of the pillar structures, forming slots extending vertically through the stack structure and the sacrificial material, at least partially removing the sacrificial material to form openings horizontally interposed between the conductive plug structures, and forming a low-K dielectric material within the openings. Microelectronic devices, memory devices, and electronic systems are also described.
Public/Granted literature
Information query
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