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    Electronic devices with recessed conductive structures
    5.
    发明授权
    Electronic devices with recessed conductive structures 有权

    公开(公告)号：US11849581B2

    公开(公告)日：2023-12-19

    申请号：US17064092

    申请日：2020-10-06

    Applicant: Micron Technology, Inc.

    Inventor： Sidhartha Gupta ,  Anilkumar Chandolu ,  S M Istiaque Hossain

    IPC: H01L21/768 ,  H10B43/27 ,  G11C11/56

    CPC classification number: H10B43/27 ,  G11C11/5671 ,  H01L21/76879 ,  H01L21/76897

    Abstract: An electronic device comprises a stack structure comprising vertically alternating insulative structures and conductive structures arranged in tiers, pillars extending vertically through the stack structure, and a barrier material overlying the stack structure. The electronic device comprises a first insulative material extending through the barrier material and into an upper tier portion of the stack structure, and a second insulative material laterally adjacent to the first insulative material and laterally adjacent to at least some of the conductive structures in the upper tier portion of the stack structure. At least a portion of the second insulative material is in vertical alignment with the barrier material. Additional electronic devices and related methods and systems are also disclosed.

    METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
    7.
    发明申请
    METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS 有权

    公开(公告)号：US20220238431A1

    公开(公告)日：2022-07-28

    申请号：US17161313

    申请日：2021-01-28

    Applicant: Micron Technology, Inc.

    Inventor： Naveen Kaushik ,  Sidhartha Gupta ,  Pankaj Sharma ,  Haitao Liu

    IPC: H01L23/522 ,  H01L27/11582 ,  G11C5/06 ,  H01L27/11556 ,  H01L21/768 ,  H01L21/48

    Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising vertically alternating insulating structures and conductive structures arranged in tiers. Each of the tiers individually comprises one of the insulating structures and one of the conductive structures. A sacrificial material is formed over the stack structure and pillar structures are formed to extend vertically through the stack structure and the sacrificial material. The method comprises forming conductive plug structures within upper portions of the pillar structures, forming slots extending vertically through the stack structure and the sacrificial material, at least partially removing the sacrificial material to form openings horizontally interposed between the conductive plug structures, and forming a low-K dielectric material within the openings. Microelectronic devices, memory devices, and electronic systems are also described.

    ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES
    8.
    发明申请
    ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES 有权

    公开(公告)号：US20250140691A1

    公开(公告)日：2025-05-01

    申请号：US19008496

    申请日：2025-01-02

    Applicant: Micron Technology, Inc.

    Inventor： Sidhartha Gupta ,  Anilkumar Chandolu

    IPC: H01L23/528 ,  G11C16/04 ,  H01L21/768 ,  H01L23/532 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

    Abstract: An electronic device comprises a stack comprising tiers of alternating conductive structures and insulative structures overlying a source tier, and strings of memory cells extending vertically through the stack. The strings of memory cells individually comprise a channel material extending vertically through the stack. The electronic device comprises an additional stack overlying the stack and comprising tiers of alternating additional conductive structures and additional insulative structures, and pillars extending through the additional stack and overlying the strings of memory cells. Each of the pillars is horizontally offset in a first horizontal direction and in a second horizontal direction transverse to the first horizontal direction from a center of a corresponding string of memory cells. The electronic device comprises conductive lines overlying the pillars, and interconnect structures directly contacting the pillars and the conductive lines. Related electronic devices, systems, and methods are also described.

    Microelectronic devices comprising stack structures having pillars and elliptical conductive contacts
    9.
    发明授权
    Microelectronic devices comprising stack structures having pillars and elliptical conductive contacts 有权

    公开(公告)号：US12267997B2

    公开(公告)日：2025-04-01

    申请号：US18394273

    申请日：2023-12-22

    Applicant: Micron Technology, Inc.

    Inventor： Lifang Xu ,  Sidhartha Gupta ,  Kar Wui Thong ,  Harsh Narendrakumar Jain

    IPC: H10B41/27 ,  G11C5/06 ,  H01L29/66 ,  H01L29/78 ,  H10B43/27

    Abstract: A method of forming a microelectronic device including a first stack structure comprising alternating levels of insulative structures and other insulative structures, forming strings of memory cells through the first stack structure, forming a second stack structure over the first stack structure, based at least partially on observed amount of pillar bending within the first stack structure, forming a first tailored reticle specific to the observed amount of pillar bending, utilizing the first tailored reticle to form openings extending through the second stack structure and over some of the strings of memory cells, wherein centers of the openings over the strings of memory cells are at least substantially aligned with the centers of uppermost surfaces of the strings of memory cells in a direction of the observed pillar bending, and forming upper pillars extending through the second stack structure and over some of the strings of memory cells.

    MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS
    10.
    发明公开
    MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS 审中-公开

    公开(公告)号：US20240099007A1

    公开(公告)日：2024-03-21

    申请号：US18525652

    申请日：2023-11-30

    Applicant: Micron Technology, Inc.

    Inventor： Yoshiaki Fukuzumi ,  Jun Fujiki ,  Matthew J. King ,  Sidhartha Gupta ,  Paolo Tessariol ,  Kunal Shrotri ,  Kye Hyun Baek ,  Kyle A. Ritter ,  Shuji Tanaka ,  Umberto Maria Meotto ,  Richard J. Hill ,  Matthew Holland

    IPC: H10B43/27 ,  H10B41/27

    CPC classification number: H10B43/27 ,  H10B41/27

    Abstract: A microelectronic device comprises a stack structure comprising a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers, first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells, second pillars extending through the additional stack structure and vertically overlying the strings of memory cells, and additional slot structures comprising a dielectric material extending through at least a portion of the additional stack structure and sub-dividing each of the block structures into sub-block structures, the additional slot structures horizontally neighboring the first pillars. Related microelectronic devices, electronic systems, and methods are also described.

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