Invention Application
- Patent Title: ZENER DIODE AND MANUFACTURING METHOD THEREOF
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Application No.: US17571401Application Date: 2022-01-07
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Publication No.: US20220238727A1Publication Date: 2022-07-28
- Inventor: Ting-Wei Liao , Chien-Yu Chen , Kun-Huang Yu , Wu-Te Weng , Chien-Wei Chiu , Ta-Yung Yang
- Applicant: RICHTEK TECHNOLOGY CORPORATION
- Applicant Address: TW Zhubei City
- Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee Address: TW Zhubei City
- Priority: TW110120191 20210603
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L29/78 ; H01L29/06 ; H01L29/66
Abstract:
The present invention provides a Zener diode and a manufacturing method thereof. The Zener diode includes: a semiconductor layer, an N-type region, and a P-type region. The N-type region has N-type conductivity, wherein the N-type region is formed in the semiconductor layer beneath an upper surface of the semiconductor layer, and in contact with the upper surface. The P-type region has P-type conductivity, wherein the P-type region is formed in the semiconductor layer and is completely beneath the N-type region, and in contact with the N-type region. The N-type region overlays the entire P-type region. The N-type region has an N-type conductivity dopant concentration, wherein the N-type conductivity dopant concentration is higher than a P-type conductivity dopant concentration of the P-type region.
Information query
IPC分类:
