Invention Application
- Patent Title: Amorphous Layers for Reducing Copper Diffusion and Method Forming Same
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Application No.: US17660508Application Date: 2022-04-25
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Publication No.: US20220254679A1Publication Date: 2022-08-11
- Inventor: Jyh-Nan Lin , Chia-Yu Wu , Kai-Shiung Hsu , Ding-I Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L23/532 ; H01L23/522 ; C23F1/12
Abstract:
A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.
Public/Granted literature
- US11967522B2 Amorphous layers for reducing copper diffusion and method forming same Public/Granted day:2024-04-23
Information query
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