Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND A DATA STORAGE SYSTEM INCLUDING THE SAME
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Application No.: US17507929Application Date: 2021-10-22
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Publication No.: US20220254807A1Publication Date: 2022-08-11
- Inventor: Jongsoo KIM , Sunil Shim , Juyoung Lim , Wonseok Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR10-2021-0018807 20210210
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11519 ; H01L27/11524 ; H01L27/11526 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L23/528

Abstract:
A semiconductor device including: a memory cell array region and a staircase region on a pattern structure; a stack structure including insulating layers and gate layers with gate pads alternately stacked in a vertical direction; a separation structure penetrating through the stack structure and contacting the pattern structure; a memory vertical structure penetrating through the stack structure and contacting the pattern structure; a support vertical structure penetrating through the stack structure and contacting the pattern structure; gate contact plugs disposed on the gate pads; and a peripheral contact plug spaced apart from the gate layers, wherein an upper surface of the memory vertical structure is at a first level, an upper surface of the peripheral contact plug is at a second level, an upper surface of the separation structure is at a third level, and upper surfaces of the gate contact plugs are at a fourth level.
Public/Granted literature
- US12262535B2 Semiconductor device and a data storage system including the same Public/Granted day:2025-03-25
Information query
IPC分类: