Invention Application
- Patent Title: 3D DEVICES WITH 3D DIFFUSION BREAKS AND METHOD OF FORMING THE SAME
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Application No.: US17480361Application Date: 2021-09-21
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Publication No.: US20220254925A1Publication Date: 2022-08-11
- Inventor: Mark I. GARDNER , H. Jim FULFORD
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L29/417
Abstract:
A semiconductor device is provided. The semiconductor device includes a first layer including a first semiconductor material. Shell structures are positioned above and electrically isolated from the first layer. The shell structures include at least one type of semiconductor material. Each shell structure is configured to include a channel region oriented in a vertical direction perpendicular to the first layer and have a current flow path in the vertical direction. The semiconductor device also includes an inner structure positioned on an inner sidewall of a respective channel region of each shell structure. The semiconductor device further includes gate structures including an outer gate structure positioned on an outer sidewall of a respective channel region of each shell structure.
Information query
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