Invention Application
- Patent Title: BONDED SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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Application No.: US17204966Application Date: 2021-03-18
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Publication No.: US20220270973A1Publication Date: 2022-08-25
- Inventor: Purakh Raj Verma , Su Xing , Shyam Parthasarathy
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110198259.1 20210222
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L25/065 ; H01L27/06 ; H01L23/552 ; H01L21/50 ; H01L21/768

Abstract:
A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device wafer includes a first insulating layer, a first device layer on the first insulating layer, and a first bonding layer on the first device layer. The second device wafer includes a second insulating layer, a second device layer on a first side of the second insulating layer, and a second bonding layer on the second device layer. The second device layer includes a second device region and a second transistor in the second device region. The second device wafer is bonded to the first device wafer by bonding the second bonding layer with the first bonding layer. A shielding structure is on a second side of the second insulating layer opposite to the first side and vertically overlapped with the second device region.
Information query
IPC分类: