Invention Application
- Patent Title: INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME
-
Application No.: US17741123Application Date: 2022-05-10
-
Publication No.: US20220271035A1Publication Date: 2022-08-25
- Inventor: Wei-Lun Hsu , Yung-Chien Kung , Ming-Tsung Yeh , Yan-Hsiu Liu , Am-Tay Luy , Yao-Pi Hsu , Ji-Fu Kung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Priority: CN201710036189.3 20170117
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/762 ; H01L21/8238 ; H01L21/761
Abstract:
An integrated circuit (IC) structure includes a substrate having several regions, several semiconductor devices formed at the substrate and respectively within the regions, and an ultra-deep (UD) trench isolation structure formed in the substrate. The substrate has a top surface and a bottom surface oppositely, and the UD trench isolation structure formed in the substrate surrounds peripheries of each of the regions for structurally and physically isolating the semiconductor devices within different regions. The UD trench isolation structure penetrates the substrate by extending from the top surface of the substrate to the bottom surface of the substrate.
Public/Granted literature
- US11916075B2 Integrated circuit structure with semiconductor devices and method of fabricating the same Public/Granted day:2024-02-27
Information query
IPC分类:
