Invention Application
- Patent Title: DEVICES INCLUDING FLOATING VIAS
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Application No.: US17662800Application Date: 2022-05-10
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Publication No.: US20220271052A1Publication Date: 2022-08-25
- Inventor: Hongqi Li , James A. Cultra , Sri Sai Sivakumar Vegunta
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; G11C5/02 ; G11C5/06 ; H01L21/768 ; H01L23/538 ; H01L27/11582

Abstract:
A device has memory cells located within a cell deck of the device. The device includes functional vias within the cell deck, and one or more floating vias within the cell deck. The functional vias are electrically coupled to conductive structures of the device and the one or more floating vias have at least one end electrically isolated from the conductive structures of the device. Methods of forming a device may include forming memory cells in a cell deck, and forming floating vias in a dielectric material adjacent to the memory cells. An overlying mask material is removed from the dielectric material, and at least some memory cells are protected from mechanical damage during the removal of the overlying mask material with the floating vias. Electronic systems may include such devices.
Public/Granted literature
- US11770928B2 Devices including floating vias Public/Granted day:2023-09-26
Information query
IPC分类: