Invention Application
- Patent Title: SENSOR AND METHOD OF FORMING THE SAME
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Application No.: US17741467Application Date: 2022-05-11
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Publication No.: US20220271177A1Publication Date: 2022-08-25
- Inventor: Lanxiang WANG , Shyue Seng TAN , Eng Huat TOH
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/028 ; H01L31/18 ; H01L31/0392 ; H01L31/107 ; H01L31/0312

Abstract:
A sensor may be provided, including a substrate having a first semiconductor layer, a second semiconductor layer, and a buried insulator layer arranged between the first semiconductor layer and the second semiconductor layer. The sensor may further include a photodiode arranged in the first semiconductor layer; and a quenching resistive element electrically connected in series with the photodiode. The quenching resistive element is arranged in the second semiconductor layer, and the quenching resistive element is arranged over the photodiode but separated from the photodiode by the buried insulator layer.
Public/Granted literature
- US11823889B2 Sensor and method of forming the same Public/Granted day:2023-11-21
Information query
IPC分类: