Invention Application
- Patent Title: STRAIN BALANCED DIRECT BANDGAP ALUMINUM INDIUM PHOSPHIDE QUANTUM WELLS FOR LIGHT EMITTING DIODES
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Application No.: US17651838Application Date: 2022-02-21
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Publication No.: US20220271194A1Publication Date: 2022-08-25
- Inventor: Kirstin ALBERI , Christopher Leo STENDER , Scott Phillip AHRENKIEL
- Applicant: Alliance for Sustainable Energy, LLC , MicroLink Devices, Inc. , South Dakota Board of Regents
- Applicant Address: US CO Golden; US IL Niles; US SD Rapid City
- Assignee: Alliance for Sustainable Energy, LLC,MicroLink Devices, Inc.,South Dakota Board of Regents
- Current Assignee: Alliance for Sustainable Energy, LLC,MicroLink Devices, Inc.,South Dakota Board of Regents
- Current Assignee Address: US CO Golden; US IL Niles; US SD Rapid City
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L33/06 ; H01L33/30 ; H01L33/00
Abstract:
Described herein are optoelectronic devices and methods incorporating strain balanced direct bandgap AlxIn1-xP multiple quantum wells. The described devices are strain balanced in that the net strain between the ordered quantum wells and barriers is low, or in some cases zero. Advantageously, the described devices may be specifically designed for higher efficiency than existing AlxIn1-xP and may be grown on commercially available GaAs substrates.
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