Invention Application
- Patent Title: GATE DRIVE CIRCUIT, AND SEMICONDUCTOR BREAKER
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Application No.: US17626296Application Date: 2020-07-10
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Publication No.: US20220271738A1Publication Date: 2022-08-25
- Inventor: Yusuke KINOSHITA , Takashi ICHIRYU , Hidetoshi ISHIDA
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- International Application: PCT/JP2020/027153 WO 20200710
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K17/04

Abstract:
A gate drive circuit includes: an input terminal; a first circuit path inserted into a line connecting the input terminal and a gate of a power transistor; a second circuit path connected in parallel to the first circuit path; and a third circuit path connected in parallel to the second circuit path. The first circuit path includes a gate resistor (Rgon). The second circuit path includes a first capacitor and a first resistor connected in series. The third circuit path includes a second capacitor and a second resistor connected in series. The second capacitor has a capacitance value greater than a capacitance value of the first capacitor. The second resistor has a resistance value greater than a resistance value of the first resistor. The gate resistor (Rgon) has a resistance value greater than the resistance value of the second resistor.
Public/Granted literature
- US11791803B2 Gate drive circuit, and semiconductor breaker Public/Granted day:2023-10-17
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