- 专利标题： METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM
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申请号： US17749240申请日： 2022-05-20
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公开(公告)号： US20220278192A1公开(公告)日： 2022-09-01
- 发明人: Jeonggyu SONG , Kyooho JUNG , Younsoo KIM , Haeryong KIM , Jooho LEE
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2019-0130813 20191021
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L21/285 ; H01L27/108
摘要：
A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
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