Invention Application
- Patent Title: Conductive Feature of a Semiconductor Device and Method of Forming Same
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Application No.: US17193201Application Date: 2021-03-05
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Publication No.: US20220285209A1Publication Date: 2022-09-08
- Inventor: U-Ting Chiu , Po-Nan Yeh , Yu-Shih Wang , Chun-Neng Lin , Ming-Hsi Yeh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/535 ; H01L23/532 ; H01L23/522

Abstract:
A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.
Public/Granted literature
- US11996324B2 Conductive feature of a semiconductor device and method of forming same Public/Granted day:2024-05-28
Information query
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