- 专利标题: MODIFIED FUSE STRUCTURE AND METHOD OF USE
-
申请号: US17192265申请日: 2021-03-04
-
公开(公告)号: US20220285269A1公开(公告)日: 2022-09-08
- 发明人: Meng-Sheng CHANG , Chien-Ying CHEN , Yao-Jen YANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/525
- IPC分类号: H01L23/525 ; H01L21/768
摘要:
An antifuse structure and IC devices incorporating such antifuse structures in which the antifuse structure includes an dielectric antifuse structure formed on an active area having a first dielectric antifuse electrode, a second dielectric antifuse electrode extending parallel to the first dielectric antifuse electrode, a first dielectric composition between the first dielectric antifuse electrode and the second dielectric antifuse electrode, and a first programming transistor electrically connected to a first voltage supply wherein, during a programming operation a programming voltage is selectively applied to certain of the dielectric antifuse structures to form a resistive direct electrical connection between the first dielectric antifuse electrode and the second dielectric antifuse electrode.