Invention Application
- Patent Title: METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM
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Application No.: US17749702Application Date: 2022-05-20
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Publication No.: US20220293719A1Publication Date: 2022-09-15
- Inventor: Jeonggyu SONG , Kyooho JUNG , Younsoo KIM , Haeryong KIM , Jooho LEE
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Priority: KR10-2019-0130813 20191021
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/285 ; H01L27/108

Abstract:
A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
Public/Granted literature
- US11810946B2 Integrated circuit device including capacitor with metal nitrate interfacial layer Public/Granted day:2023-11-07
Information query
IPC分类: