A semiconductor memory device according to an embodiment includes: a first stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked one by one, the first stacked body including a stair portion processed into a stair shape extending in a first direction such that the plurality of conductive layers forms terrace surfaces; an insulating film covering an upper portion of the first stacked body including the stair portion; and a first plate-like portion that extends in the first direction in the stair portion and penetrates the first stacked body, the first plate-like portion including a plurality of bridge portions that are arranged locally on an upper end portion side and intermittently in the first direction to couple parts of the insulating film arranged on both sides of the first plate-like portion to each other.