- 专利标题: Semiconductor Laser and Laser Radar Device Having the Semiconductor Laser
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申请号: US17211818申请日: 2021-03-25
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公开(公告)号: US20220311217A1公开(公告)日: 2022-09-29
- 发明人: Seiichi Takayama , Kang Gao , Ryo Hosoi , Ryuji Fujii
- 申请人: SAE Magnetics (H.K.) Ltd.
- 申请人地址: HK Hong Kong
- 专利权人: SAE Magnetics (H.K.) Ltd.
- 当前专利权人: SAE Magnetics (H.K.) Ltd.
- 当前专利权人地址: HK Hong Kong
- 主分类号: H01S5/34
- IPC分类号: H01S5/34 ; H01S5/042 ; H01L33/06 ; G01S17/931
摘要:
A semiconductor laser includes an active layer which emits laser light and cladding layers being formed so as to sandwich the active layer. The active layer includes a quantum dot layer including a plurality of quantum dots, which respectively confine movements of carriers in the three-dimensional directions. The laser radar device includes a light projection part which projects laser light and a light receiving part which receives reflected light of the laser light. The light projection part includes the semiconductor laser and a scanner which reflects the laser light, emitted from the semiconductor laser, to form a scanning laser light.
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