Invention Application
- Patent Title: METAL OXIDE, FORMATION METHOD OF METAL OXIDE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
-
Application No.: US17615859Application Date: 2020-06-08
-
Publication No.: US20220320339A1Publication Date: 2022-10-06
- Inventor: Shunpei YAMAZAKI , Yoshihiro KOMATSU , Hiromi SAWAI , Ryosuke WATANABE , Shinobu KAWAGUCHI , Shunichi ITO
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP2019-115150 20190621
- International Application: PCT/IB2020/055353 WO 20200608
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66
Abstract:
A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.
Information query
IPC分类:
