SECONDARY BATTERY, PORTABLE INFORMATION TERMINAL, VEHICLE, AND MANUFACTURING METHOD OF POSITIVE ELECTRODE ACTIVE MATERIAL

    公开(公告)号:US20230055667A1

    公开(公告)日:2023-02-23

    申请号:US17793194

    申请日:2021-01-21

    Abstract: A positive electrode active material with little deterioration is provided. Positive electrode active material particles with little deterioration are provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. A novel power storage device is provided. A secondary battery includes a positive electrode and a negative electrode. In the secondary battery, the positive electrode includes a positive electrode active material; the positive electrode active material includes a crystal exhibiting a layered rock-salt crystal structure; the crystal is represented by the space group R-3m; the positive electrode active material is a particle containing lithium, cobalt, titanium, magnesium, and oxygen; the concentration of the magnesium in a surface portion of the particle is higher than the concentration of the magnesium in an inner portion of the particle; and in the positive electrode active material, the concentration of the titanium in the surface portion of the particle is higher than the concentration of the titanium in the inner portion of the particle.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240387741A1

    公开(公告)日:2024-11-21

    申请号:US18619261

    申请日:2024-03-28

    Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220375938A1

    公开(公告)日:2022-11-24

    申请号:US17772423

    申请日:2020-10-29

    Abstract: A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

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