公开(公告)号：US20240355932A1

公开(公告)日：2024-10-24

申请号：US18598184

申请日：2024-03-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L21/823412 ,  H01L27/06 ,  H01L27/1225

Abstract: A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor, the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

公开(公告)号：US20230402279A1

公开(公告)日：2023-12-14

申请号：US18041726

申请日：2021-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yuichi YANAGISAWA ,  Shinya SASAGAWA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01L21/02181 ,  H01L21/02205 ,  H01L21/0228 ,  C23C16/45529 ,  C23C16/56 ,  C23C16/405

Abstract: A semiconductor device in which variation in electrical characteristics is small is provided. A first insulator is deposited, a metal oxide is device over the first insulator, a second insulator is device over the metal oxide, an oxide film is device over the second insulator, and heat treatment is performed, whereby hydrogen in the first insulator, the second insulator, and the oxide is transferred and absorbed into the metal oxide. The metal oxide is formed by an ALD method.

公开(公告)号：US20250031422A1

公开(公告)日：2025-01-23

申请号：US18785690

申请日：2024-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H10B12/00

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20230055667A1

公开(公告)日：2023-02-23

申请号：US17793194

申请日：2021-01-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Hiroshi KADOMA ,  Yoshihiro KOMATSU ,  Shiori SAGA ,  Shunpei YAMAZAKI

IPC: H01M4/525 ,  C01G53/00

Abstract: A positive electrode active material with little deterioration is provided. Positive electrode active material particles with little deterioration are provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. A novel power storage device is provided. A secondary battery includes a positive electrode and a negative electrode. In the secondary battery, the positive electrode includes a positive electrode active material; the positive electrode active material includes a crystal exhibiting a layered rock-salt crystal structure; the crystal is represented by the space group R-3m; the positive electrode active material is a particle containing lithium, cobalt, titanium, magnesium, and oxygen; the concentration of the magnesium in a surface portion of the particle is higher than the concentration of the magnesium in an inner portion of the particle; and in the positive electrode active material, the concentration of the titanium in the surface portion of the particle is higher than the concentration of the titanium in the inner portion of the particle.

公开(公告)号：US20220037534A1

公开(公告)日：2022-02-03

申请号：US17278828

申请日：2019-10-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/06 ,  H01L21/8234

Abstract: A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

公开(公告)号：US20240387741A1

公开(公告)日：2024-11-21

申请号：US18619261

申请日：2024-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Haruyuki BABA ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US20220375938A1

公开(公告)日：2022-11-24

申请号：US17772423

申请日：2020-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Yasumasa YAMANE ,  Shuhei NAGATSUKA ,  Takashi HAMADA ,  Hiroki KOMAGATA

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

公开(公告)号：US20220320339A1

公开(公告)日：2022-10-06

申请号：US17615859

申请日：2020-06-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Hiromi SAWAI ,  Ryosuke WATANABE ,  Shinobu KAWAGUCHI ,  Shunichi ITO

IPC: H01L29/786 ,  H01L29/66

Abstract: A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

公开(公告)号：US20200212185A1

公开(公告)日：2020-07-02

申请号：US16693974

申请日：2019-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H01L27/108

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20230113593A1

公开(公告)日：2023-04-13

申请号：US17915211

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshihiro KOMATSU ,  Shota MIZUKAMI ,  Shinobu KAWAGUCHI ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Yuji EGI ,  Yujiro SAKURADA ,  Shinya SASAGAWA

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.