Invention Application
- Patent Title: PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS
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Application No.: US17220660Application Date: 2021-04-01
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Publication No.: US20220320360A1Publication Date: 2022-10-06
- Inventor: Matthew DeJarld , Jeffrey R. LaRoche , Clay T. Long , Lovelace Soirez
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Main IPC: H01L31/103
- IPC: H01L31/103 ; H01L31/02
Abstract:
An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.
Public/Granted literature
- US11581448B2 Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors Public/Granted day:2023-02-14
Information query
IPC分类:
