Invention Application
- Patent Title: PLASMA CONTROL METHOD IN SEMICONDUCTOR WAFER FABRICATION
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Application No.: US17225661Application Date: 2021-04-08
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Publication No.: US20220328342A1Publication Date: 2022-10-13
- Inventor: Huang-Shao KO , Jui-Fu HSIEH , Chih-Teng LIAO , Chih-Ching CHENG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/67 ; H01L21/683 ; H01L21/3065 ; H01L21/66 ; H01J37/32
Abstract:
A method for processing a semiconductor wafer is provided. The method includes placing a first semiconductor wafer on a wafer chuck in a process chamber. The method further includes adjusting a distance between a gas dispenser positioned above the wafer chuck and an upper edge ring surrounding the wafer chuck. The method also includes producing a plasma for processing the first semiconductor wafer by exciting a gas dispenser from the gas dispenser after the adjustment. In addition, the method includes removing the first semiconductor wafer from the process chamber.
Public/Granted literature
- US12205844B2 Plasma control method in semiconductor wafer fabrication Public/Granted day:2025-01-21
Information query
IPC分类:
