公开(公告)号：US20220328342A1

公开(公告)日：2022-10-13

申请号：US17225661

申请日：2021-04-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Huang-Shao KO ,  Jui-Fu HSIEH ,  Chih-Teng LIAO ,  Chih-Ching CHENG

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/66 ,  H01J37/32

Abstract: A method for processing a semiconductor wafer is provided. The method includes placing a first semiconductor wafer on a wafer chuck in a process chamber. The method further includes adjusting a distance between a gas dispenser positioned above the wafer chuck and an upper edge ring surrounding the wafer chuck. The method also includes producing a plasma for processing the first semiconductor wafer by exciting a gas dispenser from the gas dispenser after the adjustment. In addition, the method includes removing the first semiconductor wafer from the process chamber.

公开(公告)号：US20220392785A1

公开(公告)日：2022-12-08

申请号：US17341367

申请日：2021-06-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Po-Lung HUNG ,  Yi-Tsang HSIEH ,  Yu-Hsi TANG ,  Chih-Teng LIAO ,  Chih-Ching CHENG

IPC: H01L21/67 ,  H01J37/32

Abstract: In a method of controlling a plasma beam of a plasma etcher a flow rate controller of the plasma etcher is set to generate one or more flow rates of an etching gas corresponding to one or more plasma beams of the plasma etcher. The emitted light generated by plasma discharge corresponding to the one or more plasma beams of the plasma etcher is monitored. The flow rate controller is calibrated based on the one or more flow rates and a corresponding emitted light of the plasma discharge.

公开(公告)号：US20240379387A1

公开(公告)日：2024-11-14

申请号：US18782179

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Po-Lung HUNG ,  Yi-Tsang HSIEH ,  Yu-Hsi TANG ,  Chih-Teng LIAO ,  Chih-Ching CHENG

IPC: H01L21/67 ,  H01J37/32

Abstract: In a method of controlling a plasma beam of a plasma etcher a flow rate controller of the plasma etcher is set to generate one or more flow rates of an etching gas corresponding to one or more plasma beams of the plasma etcher. The emitted light generated by plasma discharge corresponding to the one or more plasma beams of the plasma etcher is monitored. The flow rate controller is calibrated based on the one or more flow rates and a corresponding emitted light of the plasma discharge.