Invention Application
- Patent Title: 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
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Application No.: US17855775Application Date: 2022-06-30
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Publication No.: US20220336253A1Publication Date: 2022-10-20
- Inventor: Zvi Or-Bach , Brian Cronquist , Deepak C. Sekar
- Applicant: Monolithic 3D Inc.
- Applicant Address: US OR Klamath Falls
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US OR Klamath Falls
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/74 ; H01L21/762 ; H01L21/768 ; H01L21/822 ; H01L21/8238 ; H01L21/84 ; H01L23/48 ; H01L23/525 ; H01L27/02 ; H01L27/06 ; H01L27/092 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/11 ; H01L27/112 ; H01L27/11526 ; H01L27/11529 ; H01L27/11551 ; H01L27/11573 ; H01L27/11578 ; H01L27/118 ; H01L27/12 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; G11C8/16

Abstract:
A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; a second metal layer overlaying the first metal layers; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where the second transistors each include at least two side-gates, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonds.
Public/Granted literature
- US11569117B2 3D semiconductor device and structure with single-crystal layers Public/Granted day:2023-01-31
Information query
IPC分类: