Invention Application
- Patent Title: BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM SAME
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Application No.: US17229950Application Date: 2021-04-14
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Publication No.: US20220336646A1Publication Date: 2022-10-20
- Inventor: Viorel C. Ontalus , Judson R. Holt
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/06 ; H01L29/10 ; H01L29/161 ; H01L29/167 ; H01L29/66
Abstract:
Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.
Public/Granted literature
- US11588043B2 Bipolar transistor with elevated extrinsic base and methods to form same Public/Granted day:2023-02-21
Information query
IPC分类:
