Invention Application
- Patent Title: METHOD FOR DETERMINING DEFECTIVENESS OF PATTERN BASED ON AFTER DEVELOPMENT IMAGE
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Application No.: US17640792Application Date: 2020-09-03
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Publication No.: US20220342316A1Publication Date: 2022-10-27
- Inventor: Marleen KOOIMAN , Maxim PISARENCO , Abraham SLACHTER , Mark John MASLOW , Bernardo Andres OYARZUN RIVERA , Wim Tjibbo TEL , Ruben Cornelis MAAS
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Priority: EP19195527.7 20190905,EP19196323.0 20190910,EP19218296.2 20191219,EP20169181.3 20200410,EP20176236.6 20200525,EP20189952.3 20200806
- International Application: PCT/EP2020/074663 WO 20200903
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G06T7/00 ; G06T7/33

Abstract:
Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
Information query
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