- 专利标题: METHOD FOR MANUFACTURING WIRING SUBSTRATE
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申请号: US17723638申请日: 2022-04-19
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公开(公告)号: US20220346240A1公开(公告)日: 2022-10-27
- 发明人: Keisuke SHIMIZU , Kohei SUZUKI
- 申请人: IBIDEN CO., LTD.
- 申请人地址: JP Ogaki
- 专利权人: IBIDEN CO., LTD.
- 当前专利权人: IBIDEN CO., LTD.
- 当前专利权人地址: JP Ogaki
- 优先权: JP2021-073482 20210423
- 主分类号: H05K3/46
- IPC分类号: H05K3/46 ; H05K3/00 ; H05K3/28 ; H05K3/40 ; C25D5/02 ; C25D7/00 ; C23C28/00 ; C23C18/16
摘要:
A method for manufacturing a wiring substrate includes forming a conductor layer including first and second pads, forming a resin insulating layer on the conductor layer, forming, in the insulating layer, a first opening exposing the first pad and a second opening exposing the second pad, forming a covering layer on the insulating layer such that the covering layer covers the first and second openings, forming a third opening in the covering layer such that the third opening communicates with the first opening and the first pad is exposed in the third opening, forming, on a surface of the first pad, a protective film formed of material different from material forming the conductor layer, removing the covering layer from the insulating layer, and forming a conductor post on the second pad such that the conductor post is formed of material that is same as the material forming the conductor layer.
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