The present invention provides a detection method for radiation-induced defects of an oxide layer in electronic devices. The detection method includes the following steps: selecting a semiconductor material to be prepared into a substrate; preparing a back electrode on an upper surface of the substrate; growing an oxide layer on the back electrode; etching one side of the oxide layer, and exposing an etched part out of the back electrode; preparing a front electrode on an upper surface of the oxide layer; forming a plurality of grooves in the front electrode, and distributing the plurality of grooves in a grid shape to prepare a test sample; and performing a radiation test on the test sample, and detecting radiation-induced defects. By using the detection method provided by the present invention, rapid identification and detection of electrons and holes are achieved.