公开(公告)号：US12153082B2

公开(公告)日：2024-11-26

申请号：US17626820

申请日：2021-07-27

Applicant: Harbin Institute of Technology

Inventor： Xingji Li ,  Jianqun Yang ,  Gang Lv ,  Yadong Wei ,  Xiaodong Xu ,  Tao Ying ,  Xiuhai Cui

IPC: G01R31/265 ,  G01R31/26

Abstract: The present invention provides a detection method for sensitive parts of ionization damage in a bipolar transistor, which includes the following steps: selecting an irradiation source, and carrying out irradiation test on the bipolar transistor to be tested; installing the irradiated bipolar transistor on a test bench of a deep level transient spectroscopy system, and setting test parameters; selecting at least two different bias voltages, and testing the bipolar transistor to obtain a deep level transient spectrum; determining whether a defect is an ionization defect according to a peak position of the defect signal in the deep level transient spectrum; determining the defect type as oxidation trapped charges or an interface state according to the level of the defect signal in the deep level transient spectrum; and determining the sensitive area of ionization damage in the bipolar transistor according to the determination result of the defect signal type.

公开(公告)号：US20220349934A1

公开(公告)日：2022-11-03

申请号：US17626820

申请日：2021-07-27

Applicant: Harbin Institute of Technology

Inventor： Xingji Li ,  Jianqun Yang ,  Gang Lv ,  Yadong Wei ,  Xiaodong Xu ,  Tao Ying ,  Xiuhai Cui

IPC: G01R31/265 ,  G01R31/26

Abstract: The present invention provides a detection method for sensitive parts of ionization damage in a bipolar transistor, which includes the following steps: selecting an irradiation source, and carrying out irradiation test on the bipolar transistor to be tested; installing the irradiated bipolar transistor on a test bench of a deep level transient spectroscopy system, and setting test parameters; selecting at least two different bias voltages, and testing the bipolar transistor to obtain a deep level transient spectrum; determining whether a defect is an ionization defect according to a peak position of the defect signal in the deep level transient spectrum; determining the defect type as oxidation trapped charges or an interface state according to the level of the defect signal in the deep level transient spectrum; and determining the sensitive area of ionization damage in the bipolar transistor according to the determination result of the defect signal type.

公开(公告)号：US20220349843A1

公开(公告)日：2022-11-03

申请号：US17626819

申请日：2021-07-27

Applicant: Harbin Institute of Technology

Inventor： Xingji Li ,  Jianqun Yang ,  Xiaodong Xu ,  Gang Lv ,  Xiuhai Cui ,  Tao Ying ,  Yadong Wei

IPC: G01N23/18

Abstract: The present invention provides a detection method for radiation-induced defects of an oxide layer in electronic devices. The detection method includes the following steps: selecting a semiconductor material to be prepared into a substrate; preparing a back electrode on an upper surface of the substrate; growing an oxide layer on the back electrode; etching one side of the oxide layer, and exposing an etched part out of the back electrode; preparing a front electrode on an upper surface of the oxide layer; forming a plurality of grooves in the front electrode, and distributing the plurality of grooves in a grid shape to prepare a test sample; and performing a radiation test on the test sample, and detecting radiation-induced defects. By using the detection method provided by the present invention, rapid identification and detection of electrons and holes are achieved.