Invention Application
- Patent Title: FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS
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Application No.: US17812132Application Date: 2022-07-12
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Publication No.: US20220351768A1Publication Date: 2022-11-03
- Inventor: Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L27/11507 ; H01L49/02 ; H01L27/11509

Abstract:
A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.
Public/Granted literature
- US12080329B2 Ferroelectric devices and ferroelectric memory cells Public/Granted day:2024-09-03
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