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41 条记录 (耗时 0.024 秒)

    Devices comprising crystalline materials and related systems
    1.
    发明授权
    Devices comprising crystalline materials and related systems 有权

    公开(公告)号：US11532699B2

    公开(公告)日：2022-12-20

    申请号：US16898029

    申请日：2020-06-10

    申请人： Micron Technology, Inc.

    发明人： Michael Mutch ,  Manuj Nahar ,  Wayne I. Kinney

    IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/161 ,  H01L21/324 ,  H01L29/786 ,  H01L27/105

    摘要： A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.

    Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
    3.
    发明授权
    Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems 有权
    存储单元，制造方法，半导体器件结构，存储器系统和电子系统

    公开(公告)号：US09466787B2

    公开(公告)日：2016-10-11

    申请号：US13948839

    申请日：2013-07-23

    申请人： Micron Technology, Inc.

    发明人： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

    IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    摘要翻译： 磁性电池芯包括具有多个磁性区域的种子区域和其上的多个非磁性区域。 种子区域提供了能够形成具有能够形成具有期望的晶体结构的上覆自由区域的微结构的上覆非磁性区域的模板。 自由区域设置在两个非磁性区域之间，这两个非磁性区域都可以被配置成诱导表面/界面磁各向异性。 因此，该结构被配置为具有高的磁各向异性强度，高能势垒，高隧道磁阻，低编程电流，低电池到电池的电阻变化，以及磁特性中的低电池到电池的变化。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

    Enabling fast pulse operation
    7.
    发明授权
    Enabling fast pulse operation 有权

    公开(公告)号：US10748594B2

    公开(公告)日：2020-08-18

    申请号：US15895671

    申请日：2018-02-13

    申请人： Micron Technology, Inc.

    发明人： Gurtej S. Sandhu ,  Wayne I. Kinney

    IPC分类号： G11C11/16 ,  G11C16/32 ,  G11C11/14

    摘要： Methods, systems, and devices for enabling fast pulse operation are described. A threshold voltage of a selection component and a requisite duration for a voltage applied to a selection component to reach a threshold voltage in response to a voltage generated by an external source may be determined. The threshold voltage may correspond to a voltage at which the selection component is configured to release electric charge. A voltage may then be generated and applied to an access line that is in electronic communication with the selection component and a memory cell for at least the requisite duration. Electric charge may be stored at the selection component during the requisite duration and transferred to memory cell after the requisite duration.

    Semiconductor devices with seed and magnetic regions and methods of fabrication
    8.
    发明授权
    Semiconductor devices with seed and magnetic regions and methods of fabrication 有权

    公开(公告)号：US10515996B2

    公开(公告)日：2019-12-24

    申请号：US15877064

    申请日：2018-01-22

    申请人： Micron Technology, Inc.

    发明人： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

    IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10

    摘要： A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    Magnetic memory cell structures, arrays, and semiconductor devices
    9.
    发明授权
    Magnetic memory cell structures, arrays, and semiconductor devices 有权

    公开(公告)号：US10164168B2

    公开(公告)日：2018-12-25

    申请号：US15187488

    申请日：2016-06-20

    申请人： Micron Technology, Inc.

    发明人： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    IPC分类号： H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

    摘要： Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more uniformity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.