Invention Application
- Patent Title: METHOD FOR SELECTIVE DEPOSITION OF SILICON NITRIDE LAYER AND STRUCTURE INCLUDING SELECTIVELY-DEPOSITED SILICON NITRIDE LAYER
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Application No.: US17859929Application Date: 2022-07-07
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Publication No.: US20220351958A1Publication Date: 2022-11-03
- Inventor: Eric James Shero , Paul Ma , Bed Prasad Sharma , Shankar Swaminathan
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01J37/32 ; H01L21/768 ; C23C16/455 ; C23C16/34 ; H01L21/687
Abstract:
A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
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