公开(公告)号：US20240234129A1

公开(公告)日：2024-07-11

申请号：US18402950

申请日：2024-01-03

申请人： ASM IP Holding B.V.

发明人： Charles Dezelah ,  Michael Eugene Givens ,  Eric Jen Cheng Liu ,  Eric James Shero ,  Fu Tang ,  Marko Tuominen ,  Eva Elisabeth Tois ,  Andrea Illiberi ,  Tatiana Ivanova ,  Paul Ma ,  Gejian Zhao

IPC分类号： H01L21/02 ,  H01L21/311

CPC分类号： H01L21/02178 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31111

摘要： Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

公开(公告)号：US20240141486A1

公开(公告)日：2024-05-02

申请号：US18410370

申请日：2024-01-11

申请人： ASM IP Holding B.V.

发明人： Hannu Huotari ,  Todd Robert Dunn ,  Michael Eugene Givens ,  Jereld Lee Winkler ,  Paul Ma ,  Eric Shero

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/45512 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52

摘要： Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US11791153B2

公开(公告)日：2023-10-17

申请号：US17170742

申请日：2021-02-08

申请人： ASM IP HOLDING B.V.

发明人： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L21/02181 ,  H01L21/0228 ,  H01L21/02244 ,  H01L21/76837

摘要： Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20230163028A1

公开(公告)日：2023-05-25

申请号：US18148687

申请日：2022-12-30

申请人： ASM IP Holding B.V.

发明人： Salvatore Luiso ,  YoungChol Byun ,  Holger Saare ,  Jaebeom Lee ,  Sukanya Datta ,  Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/02

CPC分类号： H01L21/76879 ,  C23C16/0236 ,  C23C16/45553 ,  C23C16/06

摘要： Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US20220403516A1

公开(公告)日：2022-12-22

申请号：US17842007

申请日：2022-06-16

申请人： ASM IP Holding B.V.

发明人： Paul Ma ,  Eric Shero ,  Todd Dunn ,  Jonathan Bakke ,  Jereld Winkler ,  Xingye Wang ,  Eric Jen Cheng Liu

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/56

摘要： Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

公开(公告)号：US20220403513A1

公开(公告)日：2022-12-22

申请号：US17842057

申请日：2022-06-16

申请人： ASM IP Holding B.V.

发明人： Jereld Lee Winkler ,  Paul Ma ,  Eric James Shero

IPC分类号： C23C16/455

摘要： Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US20220018016A1

公开(公告)日：2022-01-20

申请号：US17376238

申请日：2021-07-15

申请人： ASM IP Holding B.V.

发明人： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC分类号： C23C16/06 ,  C23C16/455 ,  C23C16/32 ,  C23C16/30 ,  C23C28/00

摘要： Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

公开(公告)号：US20240218506A1

公开(公告)日：2024-07-04

申请号：US18395801

申请日：2023-12-26

申请人： ASM IP Holding B.V.

发明人： Eric James Shero ,  Jonathan Bakke ,  Arjav Prafulkumar Vashi ,  Todd Robert Dunn ,  Paul Ma ,  Jacqueline Wrench ,  Jereld Lee Winkler ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC分类号： C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/448 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/52

摘要： The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.

公开(公告)号：US20230279539A1

公开(公告)日：2023-09-07

申请号：US18142283

申请日：2023-05-02

申请人： ASM IP Holding B.V.

发明人： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC分类号： C23C16/06 ,  C23C16/455 ,  C23C28/00 ,  C23C16/30 ,  C23C16/32

CPC分类号： C23C16/06 ,  C23C16/45527 ,  C23C28/341 ,  C23C16/303 ,  C23C16/305 ,  C23C16/32

摘要： Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/40

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.