- 专利标题: MONOLITHIC THREE DIMENSIONAL INTEGRATED CIRCUIT
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申请号: US17245757申请日: 2021-04-30
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公开(公告)号: US20220352148A1公开(公告)日: 2022-11-03
- 发明人: Kam-Tou Sio , Jiann-Tyng Tzeng , Shih-Wei Peng
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/06
- IPC分类号: H01L27/06 ; H01L23/522 ; H01L23/528 ; H01L21/822
摘要:
A monolithic three dimensional integrated circuit is provided. The monolithic three dimensional integrated circuit includes a first cell layer having a first cell having a first active component of the monolithic three dimensional integrated circuit. A second layer having a second cell including a second active component. The second cell layer is formed vertically above the first cell layer. The first cell layer having the first active component and the second cell layer having the second active component are formed on a single die. The first cell has a smaller metal pitch than the second cell. A buried via electrically couples the first active component of the first cell of the first cell layer with the second active component of the second cell of the second cell layer.
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