Invention Application
- Patent Title: FLASH AND FABRICATING METHOD OF THE SAME
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Application No.: US17863367Application Date: 2022-07-12
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Publication No.: US20220352190A1Publication Date: 2022-11-03
- Inventor: Xiaojuan Gao , CHI REN
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110086650.2 20210122
- Main IPC: H01L27/11531
- IPC: H01L27/11531 ; H01L29/66 ; H01L29/788 ; H01L27/11529 ; H01L27/11524

Abstract:
A flash includes a substrate. Two gate structures are disposed on the substrate. Each of the gate structures includes a floating gate and a control gate. The control gate is disposed on the floating gate. An erase gate is disposed between the gate structures. Two word lines are respectively disposed at a side of each of the gate structures. A top surface of each of the word lines includes a first concave surface and a sharp angle. The sharp angle is closed to a sidewall of the word line which the sharp angle resided. The sidewall is away from each of the gate structures. The sharp angle connects to the first concave surface.
Public/Granted literature
- US11690220B2 Flash and fabricating method of the same Public/Granted day:2023-06-27
Information query
IPC分类: