An integrated circuit includes a photodetector that has an epitaxial layer with a first conductivity type located over a substrate. A buried layer of the first conductivity type is located within the epitaxial layer and has a higher carrier concentration than the epitaxial layer. A semiconductor layer located over the buried layer has an opposite second conductivity type and includes a first sublayer over the buried semiconductor layer and a second sublayer between the first sublayer and the buried layer. The first sublayer has a larger lateral dimension than the second sublayer, and has a lower carrier concentration than the second sublayer.