Transistor Gate Profile Optimization
Abstract:
A device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. A gate structure is disposed over the fin structures. The gate structure extends in a second direction in the top view. The second direction is different from the first direction. The fin structures have a fin pitch equal to a sum of: a dimension of one of the fin structures in the second direction and a distance between an adjacent pair of the fin structures in the second direction. An end segment of the gate structure extends beyond an edge of a closest one of the fin structures in the second direction. The end segment has a tapered profile in the top view or is at least 4 times as long as the fin pitch in the second direction.
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