Invention Application
- Patent Title: METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
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Application No.: US17874512Application Date: 2022-07-27
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Publication No.: US20220359530A1Publication Date: 2022-11-10
- Inventor: Hyunji SONG , Jaehoon KIM , Kwangho PARK , Yonghoon SON , Gyeonghee LEE , Seungjae JUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0143655 20191111
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.
Public/Granted literature
- US12127396B2 Method of manufacturing integrated circuit device Public/Granted day:2024-10-22
Information query
IPC分类: