- 专利标题： RESISTIVE MEMORY DEVICE WITH MAGNETIC LAYER HAVING TOPOLOGICAL SPIN TEXTURES FOR TUNING
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申请号： US17308499申请日： 2021-05-05
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公开(公告)号： US20220359617A1公开(公告)日： 2022-11-10
- 发明人: Seonghoon Woo , Seyoung Kim , Mingu Kang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; G11C11/16 ; H01L43/10 ; H01L43/08
摘要：
A resistive memory device includes a magnetic tunnel junction structure. The magnetic tunnel junction structure includes a free magnetic layer. The free magnetic layer includes a magnetic material configurable to host topological spin textures to tune a conductance state of the resistive memory device.
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