- 专利标题： SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE AND DRAIN CONTACT AREA AND METHODS OF FABRICATION THEREOF
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申请号： US17308617申请日： 2021-05-05
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公开(公告)号： US20220359682A1公开(公告)日： 2022-11-10
- 发明人: Wei Ju LEE , Chun-Fu CHENG , Chung-Wei WU , Zhiqiang WU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L27/092 ; H01L29/08 ; H01L29/45 ; H01L21/285 ; H01L21/8238
摘要：
Semiconductor device includes substrate having fins, first S/D feature comprising first epitaxial layer contacting first fin, second epitaxial layer on first epitaxial layer, third epitaxial layer on second epitaxial layer, third epitaxial layer comprising center and edge portion higher than center portion, and fourth epitaxial layer on third epitaxial layer, second S/D feature adjacent first S/D feature and comprising first epitaxial layer contacting second fin, second epitaxial layer on first epitaxial layer of second S/D feature, third epitaxial layer on second epitaxial layer of second S/D feature, third epitaxial layer comprising center and edge portion higher than center portion of third epitaxial layer, center and edge portions of third epitaxial layer of first and second S/D features are merging, and fourth epitaxial layer on third epitaxial layer of second S/D feature, S/D contact covering edge and center portions of third epitaxial layers of first and second S/D features.
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